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BTD1805FP Datasheet Low Vcesat NPN Epitaxial Planar Transistor

Manufacturer: Cystech Electonics

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Datasheet Details

Part number BTD1805FP
Manufacturer Cystech Electonics
File Size 277.56 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Download BTD1805FP Download (PDF)

General Description

The device is manufactured in NPN planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Overview

CYStech Electronics Corp.

Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Spec.

No.

Key Features

  • Very low collector-to-emitter saturation voltage.
  • Fast switching speed.
  • High current gain characteristic.
  • Large current capability.
  • RoHS compliant package Symbol BTD1805FP Outline TO-220FP (C forming) TO-220FP (S forming) B：Base C：Collector E：Emitter BCE BCE Ordering Information Device BTD1805FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS com.

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