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Cystech Electonics

BU941ZE3 Datasheet Preview

BU941ZE3 Datasheet

NPN Epitaxial Planar Transistor

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CYStech Electronics Corp.
Spec. No. : C660E3
Issued Date : 2010.02.03
Revised Date :
Page No. : 1/5
NPN Epitaxial Planar Transistor
BU941ZE3
BVCEO
IC
RCESAT(MAX)
350V
15A
0.18Ω
Features
High BVCEO
Low VCE(SAT)
High current capability
Built-in clamping zener
Pb-free lead plating package
Applications
High ruggedness electronic ignitions
Equivalent Circuit
BU941ZE3
B
C
Outline
TO-220
BBase
CCollector
EEmitter
E
BCE
BU941ZE3
CYStek Product Specification




Cystech Electonics

BU941ZE3 Datasheet Preview

BU941ZE3 Datasheet

NPN Epitaxial Planar Transistor

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C660E3
Issued Date : 2010.02.03
Revised Date :
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
IB(DC)
IB(Pulse)
Pd(TA=25)
Pd(TC=25)
RθJA
RθJC
Tj
Tstg
Limits
350
350
5
15
30 *1
1
5 *1
2
150
75
1
175
-65~+175
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2
*VFEC
*hFE 1
*hFE 2
Min.
350
350
-
-
-
-
-
-
-
-
300
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
100
100
20
1.8
1.8
2.2
2.5
2.5
-
-
Unit Test Conditions
V IC=1mA, IE=0
V IC=100mA, IB=0
μA VCE=300V, IE=0
μA VCB=300V, IE=0
mA VEB=5V, IC=0
V IC=8A, IB=100mA
V IC=10A, IB=250mA
V IC=8A, IB=100mA
V IC=10A, IB=250mA
V IC=10A
- VCE=10V, IC=5A
- VCE=10V, IC=8A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BU941ZE3
Package
TO-220
(Pb-free lead plating)
Shipping
50 pcs / tube, 20 tubes/ box , 4 boxes/carton
BU941ZE3
CYStek Product Specification


Part Number BU941ZE3
Description NPN Epitaxial Planar Transistor
Maker Cystech Electonics
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