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MEP4435Q8 - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • RDS(ON)=20mΩ@VGS=-10V, ID=-10A RDS(ON)=35mΩ@VGS=-5V, ID=-7A.
  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free package Equivalent Circuit MEP4435Q8 Outline SOP-8 G：Gate S：Source D：Drain MEP4435Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=100 °C Pulse.

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Datasheet Details

Part number MEP4435Q8
Manufacturer Cystech Electonics
File Size 366.28 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet MEP4435Q8 Datasheet

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    CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Spec. No. : C391Q8-A www.DataSheet4U.com Issued Date : 2008.07.17 Revised Date : Page No. : 1/7 MEP4435Q8 Description The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
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