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MTA025P01N6 Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

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Datasheet Details

Part number MTA025P01N6
Manufacturer Cystech Electonics
File Size 400.50 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA025P01N6 Datasheet

Overview

CYStech Electronics Corp.

Spec.

No.

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Small package outline.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTA025P01N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-4.5V Continuous Drain Current TC=70 °C, VGS=-4.5V TA=25 °C, VGS=-4.5V (Note 1) TA=70 °C, VGS=-4.5V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70.

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