MTA50P01SN3
Key Features
- Low gate charge
- Compact and low profile SOT-23 package
- Advanced trench process technology
- High density cell design for ultra low on resistance
- Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-4.5V, ID=-3.6A RDSON@VGS=-2.5V, ID=-3.2A -14V -4.3A 42.3mΩ(typ) 62.9mΩ(typ) Symbol
