MTB011N10RQ8 Datasheet PDF (N-Channel Enhancement Mode Power MOSFET)

MTB011N10RQ8 - N-Channel Enhancement Mode Power MOSFET

Features

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 10.7A 8.6A 7.5 mΩ(typ) 9.8 mΩ(typ) Symbol MTB011N10RQ8 Outline DD SOP-8 DD G：Gate D：Drain S：Source Pin 1 G SSS Ordering Information Device MTB011N10RQ8-0-T3-G Package Shipping SOP-8 (RoHS compliant &.

Datasheet Details

Part number	MTB011N10RQ8
Manufacturer	Cystech Electonics
File Size	428.54 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB011N10RQ8 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB011N10RQ8 Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 10.7A 8.6A 7.5 mΩ(typ) 9.

Published: Dec 4, 2016 |