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Cystech Electonics

MTB020N03KL3 Datasheet Preview

MTB020N03KL3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C143L3
Issued Date : 2016.01.22
Revised Date : 2016.02.22
Page No. : 1/9
30V N-channel Enhancement Mode MOSFET
MTB020N03KL3 BVDSS
ID@VGS=10V, TA=25°C
RDSON@VGS=10V, ID=4A
RDSON@VGS=4.5V, ID=3A
30V
7.4A
21.4mΩ (typ)
25.7mΩ (typ)
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
ESD protected gate
Pb-free lead plating package
Symbol
MTB020N03KL3
GGate
SSource
DDrain
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTB020N03KL3-0-T3-G
Package
Shipping
SOT-223
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 :2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB020N03KL3
CYStek Product Specification




Cystech Electonics

MTB020N03KL3 Datasheet Preview

MTB020N03KL3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C143L3
Issued Date : 2016.01.22
Revised Date : 2016.02.22
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
*1
Total Power Dissipation
TA=25
*2 TA=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by safe operating area
*2. Surface mounted on a 1 in2 pad of 2 oz. copper, t10s.
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
30
±20
7.4
5.9
37
2.7
1.1
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
18
45 (Note)
°C/W
Note : Surface mounted on a 1 in2 pad of 2 oz. copper, t10s; 120°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
BVDSS/Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
Min.
30
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
Test Conditions
- - V VGS=0V, ID=250μA
0.02 - V/°C Reference to 25°C, ID=250μA
- 2.5 V VDS=VGS, ID=250μA
- ±10
VGS=±16V, VDS=0V
- 1 μA VDS=30V, VGS=0V
- 25
VDS=24V, VGS=0V (Tj=70°C)
21.4
25.7
27
35
mΩ
ID=4A, VGS=10V
ID=3A, VGS=4.5V
4.5 -
S VDS=10V, ID=4A
450 -
79 -
60 -
5.8 -
18.6 -
33.8 -
11.8 -
pF VDS=15V, VGS=0, f=1MHz
ns VDS=15V, ID=1A, VGS=10V, RG=6Ω
MTB020N03KL3
CYStek Product Specification


Part Number MTB020N03KL3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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