The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CYStech Electronics Corp.
Spec. No. : C975J3 Issued Date : 2015.03.17 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB050P10J3 BVDSS ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TC=100°C
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDS(ON)@VGS=-10V, ID=-15A
Features
RDS(ON)@VGS=-4.5V, ID=-12A
• Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package
-100V -24A -17A -4.1A -3.