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Cystech Electonics

MTB050P10J3 Datasheet Preview

MTB050P10J3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C975J3
Issued Date : 2015.03.17
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB050P10J3 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TC=100°C
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDS(ON)@VGS=-10V, ID=-15A
Features
RDS(ON)@VGS=-4.5V, ID=-12A
Single Drive Requirement
Low On-resistance
Fast switching Characteristic
Pb-free lead plating and halogen-free package
-100V
-24A
-17A
-4.1A
-3.3A
45 mΩ(typ)
51 mΩ(typ)
Symbol
MTB050P10J3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB050P10J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB050P10J3
CYStek Product Specification




Cystech Electonics

MTB050P10J3 Datasheet Preview

MTB050P10J3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C975J3
Issued Date : 2015.03.17
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C
Continuous Drain Current @VGS=-10V, TC=100°C
Continuous Drain Current @VGS=-10V, TA=25°C
Continuous Drain Current @VGS=-10V, TA=70°C
Pulsed Drain Current
TC=25
(Note1)
(Note1)
(Note4)
(Note4)
(Note3)
(Note1)
Power Dissipation
TC=100
TA=25
(Note1)
(Note2)
TA=70
(Note2)
Single Pulse Avalanche Energy @ L=1mH, IAS=-24A,VDD=-50V
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
PDSM
EAS
IAS
Tj, Tstg
Limits
-100
±20
-24
-17
-4.1
-3.3
-96
75
37.5
2
1.3
288
-24
-55~+175
Unit
V
A
W
mJ
A
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2
Thermal Resistance, Junction-to-ambient, max (Note2)
Thermal Resistance, Junction-to-ambient, max (Note4)
Rth,j-a
62.5 °C/W
90
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
MTB050P10J3
CYStek Product Specification


Part Number MTB050P10J3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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