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MTB050P10J3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • RDS(ON)@VGS=-4.5V, ID=-12A.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast switching Characteristic.
  • Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.3A 45 mΩ(typ) 51 mΩ(typ) Symbol MTB050P10J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB050P10J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS.

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Datasheet Details

Part number MTB050P10J3
Manufacturer Cystech Electonics
File Size 345.78 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB050P10J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C975J3 Issued Date : 2015.03.17 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB050P10J3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TC=100°C ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDS(ON)@VGS=-10V, ID=-15A Features RDS(ON)@VGS=-4.5V, ID=-12A • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.