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Cystech Electonics

MTB06N03H8 Datasheet Preview

MTB06N03H8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh7e1e0Ht48U.com
Issued Date : 2009.05.07
Revised Date :
Page No. : 1/6
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB06N03H8
BVDSS
ID
RDSON(max)
30V
75A
6.5mΩ
Description
The MTB06N03H8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and Halogen-free package
Symbol
MTB06N03H8
Outline
Pin 1
Power pak
GGate
DDrain
SSource
MTB06N03H8
CYStek Product Specification




Cystech Electonics

MTB06N03H8 Datasheet Preview

MTB06N03H8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh7e1e0Ht48U.com
Issued Date : 2009.05.07
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TC=25
TC=100
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
30
±20
75
45
160 *1
53
140
40 *2
60
32
-55~+175
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N-CH
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2.5 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
30
1.0
-
-
-
-
75
-
-
-
-
-
-
1.5
25
-
-
-
-
5.5
8.8
3292
501
355
-
3.0
-
±100
1
25
-
6.5
11
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=24A
nA VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
A VDS =10V, VGS =10V
mΩ VGS =10V, ID=30A
mΩ VGS =4.5V, ID=24A
pF VGS=0V, VDS=15V, f=1MHz
MTB06N03H8
CYStek Product Specification


Part Number MTB06N03H8
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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