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Cystech Electonics

MTB080C10Q8 Datasheet Preview

MTB080C10Q8 Datasheet

N- and P-channel enhancement mode power MOSFET

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CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 1/12
N- and P-channel enhancement mode power MOSFET
MTB080C10Q8 BVDSS
ID@VGS=10V(-10V), TA=25°C
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
100V
2.9A
74mΩ
90mΩ
P-CH
-100V
-1.9A
174mΩ
195mΩ
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB080C10Q8
Outline
SOP-8
D2
D2
D1
D1
GGate SSource DDrain
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTB080C10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080C10Q8
CYStek Product Specification




Cystech Electonics

MTB080C10Q8 Datasheet Preview

MTB080C10Q8 Datasheet

N- and P-channel enhancement mode power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 2/12
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 2)
Continuous Drain Current @TA=70 °C (Note 2)
Pulsed Drain Current (Note 1)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
IDM
PD
Tj; Tstg
Limits
N-channel P-channel
100 -100
±20 ±20
2.9 -1.9
2.3 -1.5
12 -8
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width10s.
3.Surface mounted on minimum copper pad, pulse width10s.
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
100
1.0
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
1
10
μA
VDS=80V, VGS=0V
VDS=80V, VGS=0V, Tj=55°C
*RDS(ON)
-
-
74
90
96
120
mΩ
VGS=10V, ID=3A
VGS=4.5V, ID=3A
*GFS
- 5.9 - S VDS=10V, ID=3A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
- 333 -
- 47 - pF VDS=50V, VGS=0V, f=1MHz
- 18 -
- 6.2 9.3
-
-
17.4
18.2
25.8
27.3
ns VDS=50V, ID=1A, VGS=10V, RG=3Ω
- 6.8 10.2
MTB080C10Q8
CYStek Product Specification


Part Number MTB080C10Q8
Description N- and P-channel enhancement mode power MOSFET
Maker Cystech Electonics
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