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Cystech Electonics

MTB100N10RKJ3 Datasheet Preview

MTB100N10RKJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTB100N10RKJ3
Spec. No. : C059J3
Issued Date : 2016.09.01
Revised Date :
Page No. : 1/9
Features
Low Gate Charge
Simple Drive Requirement
ESD protected gate
Pb-free lead plating & Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
RDSON@VGS=10V, ID=8A
RDSON@VGS=4.5V, ID=6A
100V
10A
108mΩ(TYP)
123mΩ(TYP)
Equivalent Circuit
MTB100N10RKJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTB100N10RKJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB100N10RKJ3
CYStek Product Specification




Cystech Electonics

MTB100N10RKJ3 Datasheet Preview

MTB100N10RKJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=10A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
*3. 100% tested by L=0.1mH, IAS=10A, VGS=10V, VDD=25V
*1
*3
*2
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C059J3
Issued Date : 2016.09.01
Revised Date :
Page No. : 2/9
Limits
100
±20
10
6.3
20
10
25
3
30
12
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC 4.1
Thermal Resistance, Junction-to-ambient, max
RθJA
50 (Note)
110
°C/W
Note : When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given
application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
100
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
IGSS
IDSS
RDS(ON) *1
GFS *1
-
-
-
-
-
-
- ±10
VGS=±16V, VDS=0V
- 1 μA VDS =80V, VGS =0V
- 25
VDS =80V, VGS =0V, TJ=125°C
108
123
140
165
mΩ
VGS =10V, ID=8A
VGS =4.5V, ID=6A
6 - S VDS =10V, ID=5A
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
- 7.8 -
- 1.6 - nC ID=8A, VDS=80V, VGS=10V
- 1.7 -
MTB100N10RKJ3
CYStek Product Specification


Part Number MTB100N10RKJ3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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