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Cystech Electonics

MTB110P08KJ3 Datasheet Preview

MTB110P08KJ3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB110P08KJ3 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-5A
RDS(ON)@VGS=-4.5V, ID=-3A
Features
Low Gate Charge
Simple Drive Requirement
ESD Protected Gate
Pb-free Lead Plating & Halogen-free Package
-80V
-11.3A
-3.2A
103mΩ(typ)
141mΩ(typ)
Equivalent Circuit
MTB110P08KJ3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB110P08KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB110P08KJ3
CYStek Product Specification




Cystech Electonics

MTB110P08KJ3 Datasheet Preview

MTB110P08KJ3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=-10V
Continuous Drain Current @TC=100°C, VGS=-10V
Continuous Drain Current @TA=25°C, VGS=-10V
Continuous Drain Current @TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=-11A, VDD=-25V
ESD susceptibility
TC=25°C
Total Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
VDS
VGS
ID
IDSM
IDM
IAS
EAS
VESD
PD
PDSM
Tj, Tstg
* 100% UIS testing in condition of VD=-25V, L=1mH, VG=-10V, IAS=-9A, Rated VDS=-80V
Limits
-80
±20
-11.3
-7.1
-3.2
-2.6
-45
-11
60.5
2000
31
12
2.5
1.6
-55~+150
Unit
V
A
mJ
V
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient, t10s (Note 2)
Thermal Resistance, Junction-to-ambient, steady state
Symbol
RθJC
RθJA
Typical
3.6
15
40
Maximum
4
18
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of
150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. Human body model, 1.5kΩ in series with 100pF.
MTB110P08KJ3
CYStek Product Specification


Part Number MTB110P08KJ3
Description P-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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