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MTB110P08KJ3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD Protected Gate.
  • Pb-free Lead Plating & Halogen-free Package -80V -11.3A -3.2A 103mΩ(typ) 141mΩ(typ) Equivalent Circuit MTB110P08KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB110P08KJ3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant a.

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Datasheet Details

Part number MTB110P08KJ3
Manufacturer Cystech Electonics
File Size 409.57 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB110P08KJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C123J3 Issued Date : 2016.07.20 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB110P08KJ3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDS(ON)@VGS=-10V, ID=-5A RDS(ON)@VGS=-4.5V, ID=-3A Features • Low Gate Charge • Simple Drive Requirement • ESD Protected Gate • Pb-free Lead Plating & Halogen-free Package -80V -11.3A -3.