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MTB12N03Q8 Datasheet Preview

MTB12N03Q8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh7e3e0Qt48U.com
Issued Date : 2009.07.02
Revised Date :
Page No. : 1/8
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB12N03Q8
BVDSS
ID
RDSON(max)
30V
12A
11.5mΩ
Description
The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free Lead Plating and Halogen-free package
Symbol
MTB12N03Q8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTB12N03Q8
CYStek Product Specification




Cystech Electonics

MTB12N03Q8 Datasheet Preview

MTB12N03Q8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh7e3e0Qt48U.com
Issued Date : 2009.07.02
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25
TA=100
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
30
±20
12
10
48 *1
12
7.2
3.6 *2
3 *3
1.5
-55~+175
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=15A, Rated VDS=25V N-CH
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
30
1
-
-
-
-
12
-
-
-
-
-
-
1.7
15
-
-
-
-
9.7
14.5
1060
190
145
-
3
-
±100
1
25
-
11.5
18
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=12A
nA VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, TJ=125°C
A VDS =5V, VGS =10V
mΩ VGS =10V, ID=12A
mΩ VGS =4.5V, ID=10A
pF VGS=0V, VDS=15V, f=1MHz
MTB12N03Q8
CYStek Product Specification


Part Number MTB12N03Q8
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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