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MTB12P04J3 - P-Channel Logic Level Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 12.6mΩ Equivalent Circuit MTB12P04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
  • 1 Avalanche Current Avalanche Energy @.

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Datasheet Details

Part number MTB12P04J3
Manufacturer Cystech Electonics
File Size 418.98 KB
Description P-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTB12P04J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C734J3 Issued Date : 2009.07.09 Revised Date : Page No. : 1/7 MTB12P04J3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 12.6mΩ Equivalent Circuit MTB12P04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω Repetitive Avalanche Energy @ L=0.