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Cystech Electonics

MTB1D5N03H8 Datasheet Preview

MTB1D5N03H8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C984H8
Issued Date : 2017.01.06
Revised Date :
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB1D5N03H8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
30V
156A(silicon limit)
84A(package limit)
23.5A
1.3mΩ(typ)
1.6mΩ(typ)
Symbol
MTB1D5N03H8
GGate DDrain SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB1D5N03H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB1D5N03H8
CYStek Product Specification




Cystech Electonics

MTB1D5N03H8 Datasheet Preview

MTB1D5N03H8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C984H8
Issued Date : 2017.01.06
Revised Date :
Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
(Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V (silicon limit) (Note 5)
Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 5)
Continuous Drain Current @TC=25°C, VGS=10V (package limit) (Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current @L=0.1mH
(Note 3)
Single Pulse Avalanche Energy @ L=1mH, ID=50Amps, VDD=15V
(Note 4)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
TA=25°C
(Note 1)
(Note 2)
TA=70°C
(Note 2)
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
30
±20
156
110
84
23.5
18.8
450
80
1250
12.5
125
62.5
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
1.2
50
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C, and the maximum
temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C.
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of VDD=15V,
ID=20A, L=1mH, VGS=10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
.
MTB1D5N03H8
CYStek Product Specification


Part Number MTB1D5N03H8
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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