* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 156A(silicon limit) 84A(package limit) 23.5A 1.3mΩ(typ) 1.6m
MTB1D5N03H8 Datasheet (549.80 KB)
MTB1D5N03H8
Cystech Electonics
549.80 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C984H8 Issued Date : 2017.01.06 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB1D.
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