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Cystech Electonics

MTB20A06KQ8 Datasheet Preview

MTB20A06KQ8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
MTB20A06KQ8
Spec. No. : C103Q8
Issued Date : 2016.05.19
Revised Date : 2016.05.20
Page No. : 1/9
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
ESD Protected
Pb-free & Halogen-free package
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=6A
RDS(ON)@VGS=4.5V, ID=6A
60V
6.3A
5.0A
17 mΩ(typ)
20 mΩ(typ)
Symbol
MTB20A06KQ8
Outline
SOP-8
GGate DDrain SSource
Ordering Information
Device
MTB20A06KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB20A06KQ8
CYStek Product Specification




Cystech Electonics

MTB20A06KQ8 Datasheet Preview

MTB20A06KQ8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C103Q8
Issued Date : 2016.05.19
Revised Date : 2016.05.20
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current TA=25°C, VGS=10V
(Note 2) TA=70°C, VGS=10V
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=1mH, ID=6A, VDD=15V
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Operating Junction and Storage Temperature
Tj, Tstg
Limits
60
±20
6.3
5.0
40
6
18 (Note 4)
2
1.6 (Note 2)
0.9 (Note 3)
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
Rth,j-c
Thermal Resistance, Junction-to-ambient, max, dual
Thermal Resistance, Junction-to-ambient, max , single Rth,j-a
operation
Note : 1.Pulse width limited by maximum junction temperature.
2. Surface mounted on 1 in2 pad of 2 oz copper, t10s.
3. Surface mounted on minimum copper pad, pulse width10s.
4. 100% tested by conditions of L=1mH, IAS=3A, VGS=10V, VDD=15V.
Value
40
62.5
78
135
(Note 2)
(Note 3)
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
60 -
1.0 -
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
- 15
-
S VDS =5V, ID=6A
- - ±10
VGS=±16V
- - 1 μA VDS =60V, VGS =0V
--
25
VDS =48V, VGS =0V, Tj=85°C
- 17
- 20
23
30
mΩ
VGS =10V, ID=6A
VGS =4.5V, ID=6A
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
- 18.5
- 1.9
- 6.5
- 714
- 116
- 58
-
-
-
-
-
-
nC ID=6.3A, VDS=48V, VGS=10V
pF VGS=0V, VDS=30V, f=1MHz
MTB20A06KQ8
CYStek Product Specification


Part Number MTB20A06KQ8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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