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MTB20N06J3-T3-G - N-Channel MOSFET

Download the MTB20N06J3-T3-G datasheet PDF. This datasheet also covers the MTB20N06J3 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant and halogen-free package BVDSS ID RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 42A 14.6 mΩ(typ) 16.7 mΩ(typ) Symbol MTB20N06J3 Outline TO-252(DPAK) G G：Gate D：Drain S：Source D S Ordering Information Device MTB20N06J3-T3-G Package TO-252 (RoHS compliant and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MTB20N06J3-CystechElectonics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MTB20N06J3-T3-G
Manufacturer Cystech Electonics
File Size 261.44 KB
Description N-Channel MOSFET
Datasheet download datasheet MTB20N06J3-T3-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C925J3 Issued Date : 2013.08.13 Revised Date : 2013.12.30 Page No. : 1/ 9 MTB20N06J3 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant and halogen-free package BVDSS ID RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 42A 14.6 mΩ(typ) 16.
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