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Cystech Electonics

MTB2D5N03BH8 Datasheet Preview

MTB2D5N03BH8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB2D5N03BH8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=24A
30V
60A
20A
2.1 mΩ(typ)
2.9 mΩ(typ)
Symbol
MTB2D5N03BH8
Outline
Pin 1
DFN5×6
GGate DDrain SSource
Ordering Information
Device
MTB2D5N03BH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB2D5N03BH8
CYStek Product Specification




Cystech Electonics

MTB2D5N03BH8 Datasheet Preview

MTB2D5N03BH8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C998H8
Issued Date : 2015.03.05
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V(Silicon limit)
Continuous Drain Current @ TC=100°C, VGS=10V(Silicon limit)
Continuous Drain Current @ TC=25°C, VGS=10V(Package limit)
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=30A, Rated VDS=30V N-CH
Limits
30
±20
90
57
60
20 *3
16 *3
200 *1
53
140
50
20
2.5 *3
1.6 *3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2.5 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
30
1.0
-
-
-
-
-
-
- - V VGS=0V, ID=250μA
- 2.5 V VDS = VGS, ID=250μA
50 -
S VDS =5V, ID=20A
-
±100
nA VGS=±20V
-
-
1
25
μA
VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125°C
2.1 2.9 mΩ VGS =10V, ID=30A
2.9 4.0 mΩ VGS =4.5V, ID=24A
Dynamic
Ciss
Coss
Crss
- 2743 -
- 495 -
- 293 -
pF VGS=0V, VDS=15V, f=1MHz
MTB2D5N03BH8
CYStek Product Specification


Part Number MTB2D5N03BH8
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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