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Cystech Electonics

MTB50N10E3 Datasheet Preview

MTB50N10E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB50N10E3
BVDSS
Features
Low Gate Charge
Simple Drive Requirement
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=25A
RDS(ON)@VGS=5V, ID=20A
Repetitive Avalanche Rated
Fast Switching Characteristic
Pb-free lead plating and RoHS compliant package
100V
29A
32mΩ (typ)
33mΩ (typ)
Symbol
MTB50N10E3
Outline
TO-220
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB50N10E3-0-UB-X
Package
Shipping
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB50N10E3
CYStek Product Specification




Cystech Electonics

MTB50N10E3 Datasheet Preview

MTB50N10E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C893E3
Issued Date : 2016.06.01
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Continuous Drain Current @TA=25°C, VGS=10V (Note 2)
Continuous Drain Current @TA=70°C, VGS=10V (Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=0.5mH, ID=24A, VDD=50V (Note 4)
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation (TC=25)
(Note 1)
Total Power Dissipation (TC=100)
(Note 1)
Total Power Dissipation (TA=25)
(Note 2)
Total Power Dissipation (TA=70)
(Note 2)
Operating Junction and Storage Temperature
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
100
±20
29
20.5
5
4
107
24
144
8.3
83
41
2.1
1.4
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
1.8
58
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty
cycles to keep initial TJ=25°C.
4. 100% tested by conditions of L=0.1mH, IAS=15A, VGS=10V, VDD=50V
MTB50N10E3
CYStek Product Specification


Part Number MTB50N10E3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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