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MTB50N10E3 - N-Channel Enhancement Mode Power MOSFET

Features

Low Gate Charge.
Simple Drive Requirement ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=5V, ID=20A.
Repetitive Avalanche Rated.
Fast Switching Characteristic.
Pb-free lead plating and RoHS compliant package 100V 29A 32mΩ (typ) 33mΩ (typ) Symbol MTB50N10E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTB50N10E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4.

Cystech Electonics

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MTB50N10E3 N-Channel Enhancement Mode Power MOSFET by Cystech Electonics - Datasheet Preview — Datasheet preview – MTB50N10E3

Datasheet Details

Part number	MTB50N10E3
Manufacturer	Cystech Electonics
File Size	337.69 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB50N10E3 Datasheet
Additional preview pages of the MTB50N10E3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C893E3 Issued Date : 2016.06.01 Revised Date : Page No.

Published: Sep 4, 2016 |