900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cystech Electonics

MTB600N03N3 Datasheet Preview

MTB600N03N3 Datasheet

30V N-CHANNEL Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C954N3
Issued Date : 2014.06.24
Revised Date :
Page No. : 1/8
30V N-CHANNEL Enhancement Mode MOSFET
MTB600N03N3
BVDSS
ID@VGS=4.5V
RDSON@VGS=4.5V, ID=200mA
RDSON@VGS=2.5V, ID=100mA
30V
1.6A
448mΩ(typ.)
809mΩ(typ.)
Features
Low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
ESD protected gate
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB600N03N3
Outline
SOT-23
D
GGate
SSource
DDrain
GS
Ordering Information
Device
MTB600N03N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB600N03N3
CYStek Product Specification




Cystech Electonics

MTB600N03N3 Datasheet Preview

MTB600N03N3 Datasheet

30V N-CHANNEL Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Note 1, 2)
Maximum Power Dissipation @ TA=25(Note 3)
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient (Note 3)
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width300μs, duty cycle2%.
3. Surface mounted on FR-4 board, t10sec.
Symbol
VDS
VGS
ID
IDM
PD
Rth,ja
Tj, Tstg
Spec. No. : C954N3
Issued Date : 2014.06.24
Revised Date :
Page No. : 2/8
Limits
30
±12
1.6
1.3
3.2
1.38
0.01
90
-55~+150
Unit
V
A
W
W/°C
°C/W
°C
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
Min.
30
0.70
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
1.25 1.60
- ±5
-1
- 25
448 650
809 1250
640 -
41.93
7.37
5.33
8.6
17.4
16.4
16.4
1.4
0.32
0.46
0.84
6.7
2.1
-
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit Test Conditions
V
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±12V, VDS=0
μA VDS=24V, VGS=0
VDS=24V, VGS=0, Tj=55°C
mΩ
VGS=4.5V, ID=200mA
VGS=2.5V, ID=100mA
mS VDS=10V, ID=200mA
pF VDS=15V, VGS=0, f=1MHz
ns VDD=15V, ID=250mA, VGS=4V, RG=10Ω
nC VDS=15V, ID=1.6A, VGS=4.5V
V VGS=0V, IS=300mA
ns
nC
IF=500mA, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTB600N03N3
CYStek Product Specification


Part Number MTB600N03N3
Description 30V N-CHANNEL Enhancement Mode MOSFET
Maker Cystech Electonics
PDF Download

MTB600N03N3 Datasheet PDF






Similar Datasheet

1 MTB600N03N3 30V N-CHANNEL Enhancement Mode MOSFET
Cystech Electonics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy