MTB6D0N03BJ3
MTB6D0N03BJ3 is N-Channel Logic Level Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Repetitive Avalanche Rated
- Pb-free lead plating and halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
ID @ VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=25A VGS=4.5V, ID=15A
30V 12A 44A 6.4mΩ 10.4mΩ
Equivalent Circuit
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB6D0N03BJ3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape& reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Energy @ L=0.1m H, ID=30A, VDD=15V Repetitive Avalanche Energy @ L=0.05m H
Total Power Dissipation
Operating Junction and Storage Temperature Range
TC=25℃ TC=100℃ TA=25℃ TA=70℃
Symbol VDS VGS
EAS EAR
PDSM Tj, Tstg
Spec. No. : CA00J3 Issued Date : 2015.10.23 Revised Date : Page No. :...
