MTB90P06J3 - P-Channel Logic Level Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB90P06J3
Manufacturer	Cystech Electonics
File Size	254.07 KB
Description	P-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet	MTB90P06J3-CystechElectonics.pdf

Low Gate Charge.
Simple Drive Requirement.
Pb-free lead plating & Halogen-free package Equivalent Circuit MTB90P06J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω Repetitive Avalanche Energy @ L=0.0.

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Published: Dec 4, 2016 |