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Cystech Electonics

MTB90P06J3 Datasheet Preview

MTB90P06J3 Datasheet

P-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C733J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 1/7
P-Channel Logic Level Enhancement Mode Power MOSFET
MTB90P06J3
BVDSS
-60V
ID -10A
RDSON(MAX)
90.8mΩ
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & Halogen-free package
Equivalent Circuit
MTB90P06J3
Outline
TO-252
GGate DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTB90P06J3
Limits
-60
±20
-10
-7
-40
-10
5
2
33
10
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification




Cystech Electonics

MTB90P06J3 Datasheet Preview

MTB90P06J3 Datasheet

P-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C733J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
4.5
85
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
GFS *1
-60
-1
-
-
-
-10
-
-
-
- -V
-1.8 -3 V
-
±100
nA
- -1 μA
- -25 μA
- -A
82 90.8 mΩ
120 140 mΩ
9 -S
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
- 16.2 -
- 2 - nC
- 3.5 -
-8-
-
-
12
20
-
-
ns
- 12 -
- 1980 -
- 665 - pF
- 645 -
- 6.8 - Ω
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
-10
-40
A
VSD *1
- - -1.3 V
trr - 12 - ns
Qrr - 9 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VGS=0, ID=-250μA
VDS =VGS, ID=-250μA
VGS=±20, VDS=0
VDS =-32V, VGS =0
VDS =-30V, VGS =0, TJ=125°C
VDS =-5V, VGS =-4.5V
VGS =-10V, ID=-10A
VGS =-5V, ID=-8A
VDS =-5V, ID=-10A
ID=-10A, VDS=-30V, VGS=-10V
VDS=-10V, ID=-1A, VGS=-10V,
RG=6Ω
VGS=0V, VDS=-25V, f=1MHz
VGS=15mV, VDS=0, f=1MHz
IF=IS, VGS=0V
IF=-5A, dIF/dt=100A/μs
Ordering Information
Device
Package
Shipping
MTB90P06J3
TO-252
(Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Marking
B90P06
MTB90P06J3
CYStek Product Specification


Part Number MTB90P06J3
Description P-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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