MTB90P06J3 - P-Channel Logic Level Enhancement Mode Power MOSFET

Cystech Electonics

Key Features

Low Gate Charge.
Simple Drive Requirement.
Pb-free lead plating & Halogen-free package Equivalent Circuit MTB90P06J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω Repetitive Avalanche Energy @ L=0.0.

MTB90P06J3 p-channel logic level enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTB90P06J3
Manufacturer	Cystech Electonics
File Size	254.07 KB
Description	P-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet	MTB90P06J3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Spec. No. : C733J3 Issued Date : 2009.07.07 Revised Date : Page No. : 1/7 P-Channel Logic Level Enhancement Mode Power MOSFET MTB90P06J3 BVDSS -60V ID -10A RDSON(MAX) 90.8mΩ Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package Equivalent Circuit MTB90P06J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω Repetitive Avalanche Energy @ L=0.