• Part: MTB90P06J3
  • Description: P-Channel Logic Level Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 254.07 KB
Download MTB90P06J3 Datasheet PDF
Cystech Electonics
MTB90P06J3
Features - Low Gate Charge - Simple Drive Requirement - Pb-free lead plating & Halogen-free package Equivalent Circuit Outline TO-252 G:Gate D:Drain S:Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current - 1 Avalanche Current Avalanche Energy @ L=0.1m H, ID=-10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05m H - 2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : - 1. Pulse width limited by maximum junction temperature - 2. Duty cycle ≤ 1% Symbol VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg Limits -60 ±20...