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MTBA0N10KJ3 - N-Channel Enhancement Mode MOSFET

Cystech Electonics

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Datasheet Details

Part number: MTBA0N10KJ3
Manufacturer: Cystech Electonics
File Size: 442.38 KB
Datasheet: MTBA0N10KJ3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode MOSFET

MTBA0N10KJ3 Product details

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD Protected Gate.
Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8.8A RDS(ON)@VGS=4.5V, ID=8.8A RDS(ON)@VGS=4V, ID=8.8A 100V 13.4A 3.7A 82 mΩ(typ) 89 mΩ(typ) 92 mΩ(typ) Symbol MTBA0N10KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTBA0N10KJ.

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N-Channel Enhancement Mode MOSFET Cystech Electonics

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