• Part: MTBA0N10KJ3
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 442.38 KB
Download MTBA0N10KJ3 Datasheet PDF
Cystech Electonics
MTBA0N10KJ3
Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - ESD Protected Gate - Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8.8A RDS(ON)@VGS=4.5V, ID=8.8A RDS(ON)@VGS=4V, ID=8.8A 100V 13.4A 3.7A 82 mΩ(typ) 89 mΩ(typ) 92 mΩ(typ) Symbol Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTBA0N10KJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C139J3 Issued Date : 2015.09.30 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1)...