* Low On Resistance ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=17A
* Simple Drive Requirement RDS(ON)@VGS=4.5V, ID=10A
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package 40V 40A 25.3A 9A 7.2A 6.7mΩ(typ) 8.7mΩ(
MTD07A04DH8 Datasheet (512.78 KB)
MTD07A04DH8
Cystech Electonics
512.78 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C140H8 Issued Date : 2016.01.18 Revised Date : Page No. : 1/ 9 Dual N-Channel Enhancement Mode Power MOSFET M.
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