MTD07N04E3 Description
CYStech Electronics Corp. 2015.12.09 Revised Date : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTD07N04E3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
MTD07N04E3 Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package