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MTD07N04I3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTD07N04I3 Outline TO-251 G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTD07N04I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compo.

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Datasheet Details

Part number MTD07N04I3
Manufacturer Cystech Electonics
File Size 335.48 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD07N04I3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C140I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTD07N04I3 BVDSS ID@VGS=10V, TC=25°C 40V 50A RDS(ON)@VGS=10V, ID=20A 6.3 mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 8.