MTE010N10E3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE010N10E3
Manufacturer	Cystech Electonics
File Size	230.52 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE010N10E3-CystechElectonics.pdf

Low Gate Charge.
Simple Drive Requirement.
Repetitive Avalanche Rated.
Fast Switching Characteristic.
RoHS compliant package Symbol MTE010N10E3 Outline TO-220 G：Gate D：Drain S：Source Ordering Information Device Package MTE010N10E3-0-UB-S TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packin.

📁 MTE010N10E3 Similar Datasheet

MTE030N15RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTE100N10KRH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
MTE1011P - Metal Can Infrarred Emitter (Marktech Corporate)
MTE1040 - INFRARED LED (Marktech Corporate)
MTE1050A - INFRARED LED (Marktech Corporate)
MTE1070A - INFRARED LED (Marktech Corporate)
MTE1080 - INFRARED LED (Marktech Corporate)
MTE108CL - INFRAED EMITTER (Marktech Corporate)

Other Datasheets by Cystech Electonics

Published: Sep 4, 2016 |