MTE010N10E3 Description
CYStech Electronics Corp. 2013.11.12 Revised Date.
MTE010N10E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package
MTE010N10E3 is N-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
CYStech Electronics Corp. 2013.11.12 Revised Date.