MTE011N10RFP - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE011N10RFP
Manufacturer	Cystech Electonics
File Size	537.75 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE011N10RFP-CystechElectonics.pdf

ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C.
Low On Resistance RDS(ON)@VGS=10V, ID=11A.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Insulating package, front/back side insulating voltage=2500V(AC).
RoHS compliant package 100V 34A 9A 11 mΩ(typ) Symbol MTE011N10RFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE011N10RFP-0-UB-S Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box,.

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Published: Sep 4, 2016 |