MTE011N10RJ3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE011N10RJ3
Manufacturer	Cystech Electonics
File Size	550.65 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE011N10RJ3-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A 100V 48A 10.6A 10 mΩ(typ) Symbol MTE011N10RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTE011N10RJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment.

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Published: Sep 4, 2016 |