* Low Gate Charge ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 150V 65A 16.6mΩ (typ) Symbol MTE016N15E3 Outline TO-
MTE016N15E3 Datasheet (343.65 KB)
MTE016N15E3
Cystech Electonics
343.65 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C434E3 Issued Date : 2016.05.16 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE016N1.
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