MTE016N15E3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTE016N15E3
Manufacturer	Cystech Electonics
File Size	343.65 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTE016N15E3-CystechElectonics.pdf

Low Gate Charge ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A.
Simple Drive Requirement.
Repetitive Avalanche Rated.
Fast Switching Characteristic.
Pb-free lead plating and RoHS compliant package 150V 65A 16.6mΩ (typ) Symbol MTE016N15E3 Outline TO-220 G：Gate D：Drain S：Source G DS Ordering Information Device MTE016N15E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment.

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Published: Sep 4, 2016 |