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Cystech Electonics

MTN4N65CI3 Datasheet Preview

MTN4N65CI3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C080I3
Issued Date : 2016.07.19
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN4N65CI3
BVDSS
ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
Features
RDS(ON)@VGS=10V, ID=2A
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free Lead Plating and Halogen-free Package
650V
4A
2.4A
1.8Ω(typ)
Applications
Open Framed Power Supply
Adapter
STB
Symbol
MTN4N65CI3
Outline
TO-251
GGate DDrain SSource
G DS
Ordering Information
Device
MTN4N65CI3-0-UA-G
Package
TO-251
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTN4N65CI3
CYStek Product Specification




Cystech Electonics

MTN4N65CI3 Datasheet Preview

MTN4N65CI3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C080I3
Issued Date : 2016.07.19
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
*100% UIS testing in condition of VDD=50V, L=8mH, VG=10V, IL=2A, Rated VDS=650V
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=2A, VDD=50V, L=8mH, VG=10V, starting TJ=+25.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
TL
PD
Tj, Tstg
Limits
650
±30
4*
2.4*
16*
2
16
4.8
300
48
0.38
-55~+150
Unit
V
A
mJ
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1)
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2.6
50
110
1. When the device is mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C.
2. When the device is mounted on the minimum pad size recommended (PCB mount) with TA=25°C.
Unit
°C/W
MTN4N65CI3
CYStek Product Specification


Part Number MTN4N65CI3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 10 Pages
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