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Cystech Electonics Corp

BTA608A3 Datasheet Preview

BTA608A3 Datasheet

General Purpose PNP Epitaxial Planar Transistor

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CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTA608A3
wSpwewc..DNao.ta: SCh3e0e6tA43U-.Scom
Issued Date : 2005.09.29
Revised Date :
Page No. : 1 / 5
Features
The BTA608A3 is designed for use in driver stage of AF amplifier and general purpose amplification.
High HFE and excellent linearity
Large current capability and wide SOA
Complementary to BTC536A3
Pb-free package
Symbol
BTA608A3
Outline
TO-92
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
Tj
Tstg
BTA608A3
ECB
Limits
-60
-50
-6
-150
-400
500
250
150
-55~+150
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
CYStek Product Specification




Cystech Electonics Corp

BTA608A3 Datasheet Preview

BTA608A3 Datasheet

General Purpose PNP Epitaxial Planar Transistor

No Preview Available !

CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh3e0e6tA43U-S.com
Issued Date : 2005.09.29
Revised Date :
Page No. : 2 / 5
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(sat)
hFE 1
hFE 2
fT
Cob
Min.
-50
-60
-6
-
-
-
-
160
70
-
-
Typ.
-
-
-
-
-
-
-
-
-
200
4.5
Classification Of hFE 1
Max.
-
-
-
-0.1
-0.1
-0.3
-1.0
560
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-1mA
IC=-10µA
IE=-10µA
VCB=-40V
VEB=-5V
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-1mA
VCE=-6V, IC=-0.1mA
VCE=-6V, IC=-10mA
VCB=-6V, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Rank
Range
F
160~320
G
280~560
BTA608A3
CYStek Product Specification


Part Number BTA608A3
Description General Purpose PNP Epitaxial Planar Transistor
Maker Cystech Electonics Corp
Total Page 5 Pages
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