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TIP31CE3 Datasheet 3A NPN Epitaxial Planar Power Transistor

Manufacturer: Cystech Electonics Corp

Datasheet Details

Part number TIP31CE3
Manufacturer Cystech Electonics Corp
File Size 172.39 KB
Description 3A NPN Epitaxial Planar Power Transistor
Download TIP31CE3 Download (PDF)

General Description

TIP31CE3 is designed for use in general purpose amplifier and switching applications.

• Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A • High collector-emitter sustaining voltage, BVCEO(SUS) = 100V(min) • High current gain-bandwidth product , fT = 3MHz(min) @ IC = 500mA

Overview

CYStech Electronics Corp.

3A NPN Epitaxial Planar Power Transistor www.DataSheet4U.com Issued Date : 2003.09.04 Revised Date : Page No.

: 1/4 Spec.

Key Features

  • Symbol TIP31CE3 Outline TO-220AB B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP IB PD.