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2SD880 Datasheet

NPN Transistor

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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SD880
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
VCBO
60
Collector-Emitter Voltage
VCEO
60
Emitter-Base Voltage
VEBO
7
Collector Current
IC 3
Base Current
IB 0.5
Total Power Dissipation
Total Power Dissipation(TC=25oC)
PD
PD
1.5
30
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
A
A
W
W
oC
oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
DC Current Gain(1)
IEBO
VCE(sat)
VBE(on)
hFE
Transition Frequency
fT
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
60
60
-
-
-
-
60
-
- - V IC=1mA, IE=0
- - V IC=50mA, IB=0
- 0.1 mA VCB=60V, IE=0
- 0.1 mA VEB=7V, IC=0
- 1 V IC=3A, IB=0.3A
- 1 V IC=0.5A, VCE=5V
- 300 - IC=0.5A, VCE=5V
3 - MHz IC=0.5A, VCE=5V
Classification of hFE
Rank
O
Range
60~120
Y
100~200
GR
150~300


Part Number 2SD880
Description NPN Transistor
Maker DC COMPONENTS
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2SD880 Datasheet PDF






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