Full PDF Text Transcription for PN2222 (Reference)
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PN2222. For precise diagrams, and layout, please refer to the original PDF.
DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS PN2222 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier an...
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LANAR TRANSISTOR Description Designed for general purpose amplifier and highspeed, medium-power switching applications. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 60 30 5 600 625 +150 -55 to +150 Unit V V V mA mW oC oC .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ .050 (1.27)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3