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DG3N80 - N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet Summary

Description

DG3N80 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG3N80
Manufacturer DGME
File Size 824.25 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG3N80 Datasheet
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    DG3N80 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG3N80N，， ，，，。 ，，。 DG3N80 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 800 3.0 4.
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