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DG55N06 - N-CHANNEL ENHANCEMENT MODE MOSFET

The DG55N06 by DGME is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.

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Official preview page of the DG55N06 N-CHANNEL ENHANCEMENT MODE MOSFET datasheet (DGME).

Datasheet Details

Part number DG55N06
Manufacturer DGME
File Size 1.19 MB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG55N06-DGME.pdf
Additional preview pages of the DG55N06 datasheet.

DG55N06 Product details

Description

DG55N06N，， ，，，。 ，，。 DG55N06 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.Symbol MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 60 55 18 115 V A mΩ pF Package

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