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2N6342 Datasheet Preview

2N6342 Datasheet

SILICON BIDIRECTIONAL THYRISTORS

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2N6342-2N6349
High-reliability discrete products
and engineering services since 1977
SILICON BIDIRECTIONAL THYRISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(Gate open, TJ = -40 to 110°C, ½ sine wave 50 to 60Hz)
2N6342, 2N6346
2N6343, 2N6347
2N6344, 2N6348
2N6345, 2N6349
VDRM
200
400
Volts
600
800
RMS on-state current
Full cycle sine wave 50 to 60Hz
TC = 80°C
TC = 90°C
IT(RMS)
8
Amps
4
Peak non-repetitive surge current
(One full cycle, 60Hz, TC = 80°C)
Preceded and followed by rated current
ITSM
100
Amps
Circuit fusing (t = 8.3ms)
I2t
40
A2s
Peak gate power
(TC = 80°C, pulse width = 2µs)
PGM
20
Watts
Average gate power
(TC = 80°C, t = 8.3ms)
PG(AV)
0.5
Watts
Peak gate current
IGM
2
Amps
Peak gate voltage
VGM
10
Volts
Operating temperature range
TJ
-40 to 125
°C
Storage temperature range
Tstg
-40 to 150
°C
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Max
Unit
2.2
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Peak blocking current
(VD = rated VDRM, gate open)
TJ = 25°C
TJ = 100°C
IDRM
-
-
10
-
-
2
Peak on-state voltage
(ITM = 11A peak, pulse width = 1 to 2ms, duty cycle ≤ 2%)
VTM
-
1.3
1.55
Unit
µA
mA
Volts
Rev. 20131205




DIGITRON

2N6342 Datasheet Preview

2N6342 Datasheet

SILICON BIDIRECTIONAL THYRISTORS

No Preview Available !

High-reliability discrete products
and engineering services since 1977
2N6342-2N6349
SILICON BIDIRECTIONAL THYRISTORS
Gate trigger current (continuous dc)
(VD = 12Vdc, RL = 100ohms)
(Minimum gate pulse width = 2µs)
MT2+, G+ All types
MT2+, G- 2N6346-2N6349
MT2-, G- All types
MT2-, G+ 2N6346-2N6349
MT2+, G+:MT2-, G-, TC = -40°C All types
MT2+, G-:MT2-, G+, TC = -40°C, 2N6346-2N6349
Gate trigger voltage (continuous dc)
(VD = 12Vdc, RL = 100ohms)
(Minimum gate pulse width = 2µs)
MT2+, G+ All types
MT2+, G- 2N6346-2N6349
MT2-, G- All types
MT2-, G+ 2N6346-2N6349
MT2+, G+:MT2-, G-, TC = -40°C All types
MT2+, G-:MT2-, G+, TC = -40°C, 2N6346-2N6349
(VD = rated VDRM, RL = 10kohms, TJ = 100°C)
MT2+, G+; MT2-, G- All types
MT2+, G-;MT2-, G-, 2N6346-2N6349
Holding current
(VD = 12Vdc, gate open)
(IT = 200mA)
TC = 25°C
TC = -40°C
Turn-on time
(VD = rated VDRM, ITM = 11A, IGT = 120mA, rise time = 0.1µs,
pulse width = 2µs)
Critical rate of rise of commutation voltage
(VD = rated VDRM, ITM = 11A, commutating di/dt = 4.0A/ms,
gate unenergized, TC = 80°C)
-
12
50
IGT
-
12
75
mA
-
20
50
-
35
75
-
-
100
-
-
125
VGT
Volts
-
0.9
2.0
-
0.9
2.5
-
1.1
2.0
-
1.4
2.5
-
-
2.5
-
-
3.0
0.2
-
-
0.2
-
-
IH
mA
-
6
40
-
-
75
tgt
µs
-
1.5
2
dv/dt
V/µs
-
5
-
Rev. 20131205



Part Number 2N6342
Description SILICON BIDIRECTIONAL THYRISTORS
Maker DIGITRON
Total Page 3 Pages
PDF Download

2N6342 Datasheet PDF





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