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DIGITRON

MJ10005 Datasheet Preview

MJ10005 Datasheet

NPN Transistor

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MJ10004-MJ10005
High-reliability discrete products
and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Collector emitter voltage
Collector emitter voltage
Collector emitter voltage
Emitter base voltage
Collector current-Continuous
-Peak
Base current
Total power dissipation @ TC = 25°C
Total power dissipation @ TC = 100°C
Derate above 25°C
Operating and storage temperature range
Thermal resistance, junction to case
Symbol
VCEV
VCEX(sus)
VCEO(sus)
VEBO
IC
ICM
IB
PD
TJ, Tstg
RѲJC
MJ10004
MJ10005
450
500
400
450
350
400
8.0
20
30
2.5
175
100
1.0
-65 to +200
1.0
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector emitter sustaining voltage
MJ10004
350
-
(IC = 250mA, IB = 0, Vclamp = Rated VCEO)
MJ10005
VCEO(sus)
400
-
Collector cutoff current
(VCE = Rated VCEV, RBE = 50Ω, TC = 100°C )
ICER
-
5.0
Collector cutoff current
(VCEV = Rated VCEV, VBE(off) = 1.5V)
(VCEV = Rated VCEV, VBE(off) = 1.5V, TC = 150°C)
ICEV
-
0.25
-
5.0
Emitter cutoff current
(VEB = 2.0V, IC = 0)
IEBO
-
175
ON CHARACTERISTICS (1)
DC current gain
(IC = 5.0A, VCE = 5.0V)
(IC = 10A, VCE = 5.0V)
hFE
50
600
40
400
Collector emitter saturation voltage
(IC = 10A, IB = 400mA)
(IC = 20A, IB = 2.0A)
(IC = 10A, IB = 400mA, TC = 100°C)
-
1.9
VCE(sat)
-
3.0
-
2.0
Base-emitter saturation voltage
(IC = 10A, IB = 400mA)
(IC = 10A, IB = 400mA, TC = 100°C)
VBE(sat)
-
2.5
-
2.5
Unit
V
V
V
V
A
A
W
W
W/°C
°C
°C/W
Unit
Vdc
mA
mA
mA
-
V
V
Rev. 20200619




DIGITRON

MJ10005 Datasheet Preview

MJ10005 Datasheet

NPN Transistor

No Preview Available !

MJ10004-MJ10005
High-reliability discrete products
and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Max
Unit
Diode forward voltage
(IF = 10A)
Vf
-
DYNAMIC CHARACTERISTICS
Small signal current gain(2)
(IC = 1.0A, VCE = 10V, ftest = 1MHz)
ǀhfeǀ
10
Output capacitance
(VCB = 10V, IE = 0, ftest = 100kHz)
Cob
100
SWITCHING CHARACTERISTICS
Delay time
Rise time
Storage time
Fall time
td
-
(VCC = 250V, IC = 10A,
tr
-
IB1 = 400mA, VBE(off) = 5.0V,
tp = 50µs, duty cycle ≤ 2%)
ts
-
tf
-
Note 1: Pulse test: pulse width = 5ms, duty cycle ≤ 2%.
Note 2: fT = hfe* ftest
MECHANICAL CHARACTERISTICS
Case
TO-3
Marking
Alpha-numeric
Polarity
See below
5.0
V
-
-
pF
-
0.2
0.6
µs
1.5
0.5
TO-3
Inches
Millimeters
Min Max Min Max
CD - 0.875 - 22.220
CH 0.250 0.380 6.860 9.650
HT 0.060 0.135 1.520 3.430
BW - 1.050 - 26.670
HD 0.131 0.188 3.330 4.780
LD 0.038 0.043 0.970 1.090
LL 0.312 0.500 7.920 12.700
BL 1.550 REF
39.370 REF
MHS 1.177 1.197 29.900 30.400
PS 0.420 0.440 10.670 11.180
S1 0.655 0.675 16.640 17.150
Rev. 20200619



Part Number MJ10005
Description NPN Transistor
Maker DIGITRON
Total Page 3 Pages
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MJ10005 Datasheet PDF





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