MJ10004-MJ10005
High-reliability discrete products
and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
FEATURES
• Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
• Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Collector emitter voltage
Collector emitter voltage
Collector emitter voltage
Emitter base voltage
Collector current-Continuous
-Peak
Base current
Total power dissipation @ TC = 25°C
Total power dissipation @ TC = 100°C
Derate above 25°C
Operating and storage temperature range
Thermal resistance, junction to case
Symbol
VCEV
VCEX(sus)
VCEO(sus)
VEBO
IC
ICM
IB
PD
TJ, Tstg
RѲJC
MJ10004
MJ10005
450
500
400
450
350
400
8.0
20
30
2.5
175
100
1.0
-65 to +200
1.0
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector emitter sustaining voltage
MJ10004
350
-
(IC = 250mA, IB = 0, Vclamp = Rated VCEO)
MJ10005
VCEO(sus)
400
-
Collector cutoff current
(VCE = Rated VCEV, RBE = 50Ω, TC = 100°C )
ICER
-
5.0
Collector cutoff current
(VCEV = Rated VCEV, VBE(off) = 1.5V)
(VCEV = Rated VCEV, VBE(off) = 1.5V, TC = 150°C)
ICEV
-
0.25
-
5.0
Emitter cutoff current
(VEB = 2.0V, IC = 0)
IEBO
-
175
ON CHARACTERISTICS (1)
DC current gain
(IC = 5.0A, VCE = 5.0V)
(IC = 10A, VCE = 5.0V)
hFE
50
600
40
400
Collector emitter saturation voltage
(IC = 10A, IB = 400mA)
(IC = 20A, IB = 2.0A)
(IC = 10A, IB = 400mA, TC = 100°C)
-
1.9
VCE(sat)
-
3.0
-
2.0
Base-emitter saturation voltage
(IC = 10A, IB = 400mA)
(IC = 10A, IB = 400mA, TC = 100°C)
VBE(sat)
-
2.5
-
2.5
Unit
V
V
V
V
A
A
W
W
W/°C
°C
°C/W
Unit
Vdc
mA
mA
mA
-
V
V
Rev. 20200619
