Datasheet Summary
PLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device Q1 Q2
BVDSS 20V -20V
RDS(ON) 0.4Ω @ VGS = 4.5V 0.5Ω @ VGS = 2.5V 0.7Ω @ VGS = -4.5V 0.9Ω @ VGS = -2.5V
ID @TA = +25°C 1.1A 1.0A -0.8A -0.7A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features and Benefits
- Low On-Resistance
- Low Gate Threshold Voltage
N-Channel: VGS(TH) < 1V P-Channel: VGS(TH) < -1V
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- plementary Pair MOSFET
- Ultra-Small Surface Mount Package
- ESD...