Datasheet Summary
PLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device Q1
BVDSS 30V
Q2
-30V
RDS(ON)
60mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V 95mΩ @ VGS = -10V 140mΩ @ VGS = -4.5V
ID TA = +25°C
3.6A 2.7A -2.8A -2.3A
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- Backlighting
-...