Datasheet Summary
ADVANCE INFORMATION YM
PLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
BVDSS
Q1
N-Channel
25V
Q2 P-Channel
-25V
RDS(ON) MAX
0.45Ω @ VGS = 4.5V 0.60Ω @ VGS = 2.7V 0.73Ω @ VGS = 1.8V 1.1Ω @ VGS = -4.5V 1.5Ω @ VGS = -2.7V 2.2Ω @ VGS = -1.8V
ID MAX TA = +25°C
0.68A
-0.46A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low...