Datasheet Summary
100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
BVDSS 100V
RDS(ON) MAX
33mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V
ID MAX TA = +25°C
6A 5A
Description
This new generation plementary MOSFET H-Bridge Features low on-resistance achievable with low gate drive.
Features
- Thermally Efficient Package
- Cooler Running Applications
- High Conversion Efficiency
- Low RDS(ON)
- Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
- 100% Unclamped Inductive Switching (UIS) Test in Production
- Ensures More Reliable and Robust End Application
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
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