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Diodes Semiconductor Electronic Components Datasheet

DMJ70H1D5SV3 Datasheet

N-CHANNEL MOSFET

No Preview Available !

NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
DMJ70H1D5SV3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
700V
RDS(ON) MAX
1.5@ VGS = 10V
ID MAX
TC = +25°C
5.0A
Features and Benefits
Low On-Resistance
High BVDSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Adaptor
LCD & PDP TV
Lighting
Mechanical Data
Case: TO251 (Type HE1)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
TO251 (Type HE1)
Top View
Bottom View
GDS
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMJ70H1D5SV3
Case
TO251 (Type HE1)
Packaging
75pieces / Tube
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
TO251 (Type HE1)
4N70SV
YYWW
=Manufacturers Marking
4N70SV = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Last Two Digits of Year (ex: 18 = 2018)
WW or WW = Week Code (01 to 53)
DMJ70H1D5SV3
Document number: DS39416 Rev. 4 - 3
1 of 6
www.diodes.com
June 2018
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMJ70H1D5SV3 Datasheet

N-CHANNEL MOSFET

No Preview Available !

NOT RECOMMENDED FOR NEW DESIGN -
NO ALTERNATE PART
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt (Note 7)
TC = +25°C
TC = +100°C
L = 60mH
L = 60mH
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
dv/dt
DMJ70H1D5SV3
Value
700
±30
5.0
3.2
3.0
6.0
0.5
7.5
5.2
Unit
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
78
31
80
1.8
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
700
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
IGSS
Gate Threshold Voltage
VGS(TH)
2
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
VSD
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg

Total Gate Charge
Qg

Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF

Body Diode Reverse Recovery Time
tRR
Body Diode Reverse Recovery Time (TJ = +150°C)
tRR

Body Diode Reverse Recovery Charge
QRR

Body Diode Reverse Recovery Charge (TJ = +150°C) QRR

Typ
3.4
1.25
0.85
316
124
3.9
2.2
9.8
1.3
5.3
7.5
10
21
5
190
255
1.4
2.0
Max
1
100
4
1.5
1.3






Unit
V
µA
nA
V
V
pF
nC
ns
ns
ns
µC
µC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1A
VGS = 0V, IS = 1A
VDS = 50V, f = 1MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 560V, ID = 3.2A,
VGS = 10V
VDD = 350V, VGS = 10V,
Rg = 4.7, ID = 3.2A
IS = 3.2A, dI/dt = 100A/μs
DMJ70H1D5SV3
Document number: DS39416 Rev. 4 - 3
2 of 6
www.diodes.com
June 2018
© Diodes Incorporated


Part Number DMJ70H1D5SV3
Description N-CHANNEL MOSFET
Maker DIODES
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