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DMJ70H600SH3 Datasheet

N-CHANNEL MOSFET

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Product Summary
BVDSS
700V
RDS(ON) Max
0.6@ VGS = 10V
ID
TC = +25°C
11A
DMJ70H600SH3
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
High BVDSS Rating for Power Application
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Motor Control
Backlighting
AC-DC Converters
Mechanical Data
Case: TO251 (Type TH3)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
TO251 (Type TH3)
Top View
Bottom View
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMJ70H600SH3
Case
TO251 (Type TH3)
Packaging
75 Pieces / Tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO251 (Type TH3)
70H600
YYWW
= Manufacturers Marking
70H600 = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
DMJ70H600SH3
Document number: DS38953 Rev. 2 - 2
1 of 7
www.diodes.com
April 2017
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMJ70H600SH3 Datasheet

N-CHANNEL MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7)
Avalanche Energy (Note 7)
Peak Diode Recovery dv/dt (Note 7)
TC = +25°C
TC = +100°C
L = 60mH
L = 60mH
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
dv/dt
DMJ70H600SH3
Value
700
±30
11
7
1.8
11
1.5
67.5
5
Unit
V
V
A
A
A
A
mJ
V/ns
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TC = +25°C
TC = +100°C
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
113
45
57
1.1
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
700
2




Typ
2.9
0.5
0.9
643
524
13.5
3.6
18.2
2.5
8.5
11
22
85
23
193
1.6
Max
1
100
4
0.6
1.2




Unit
V
µA
nA
V
V
pF
nC
ns
ns
µC
Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.4A
VGS = 0V, IS = 4.6A
VDS = 25V, f = 1MHz,
VGS = 0V
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 380V, ID = 4.6A,
VGS = 10V
VDD = 380V, VGS = 10V,
Rg = 25, ID = 4.6A
IS = 4A, dI/dt = 100A/μs
DMJ70H600SH3
Document number: DS38953 Rev. 2 - 2
2 of 7
www.diodes.com
April 2017
© Diodes Incorporated


Part Number DMJ70H600SH3
Description N-CHANNEL MOSFET
Maker DIODES
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