Datasheet Summary
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON) Max
22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V 50mΩ @ VGS = 1.5V
ID Max TA = +25°C
7.1A 6.5A 5.5A 4.7A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
Applications
- Battery Management Application
- Power Management Functions
- DC-DC Converters
Features
- 0.6mm Profile- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant...