* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* 100% Unclamped Inductive Switching (UIS) Test in Pro
DMN3009LFVWQ Datasheet (559.94 KB)
DMN3009LFVWQ
559.94 KB
30v n-channel mosfet.
DMN3009LFVWQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 30V RDS(ON) Max 5.0m @ VGS = 10V 7.4m @ VGS = 4.5V ID Max.
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