Datasheet Summary
Product Summary
BVDSS 30V
RDS(ON) Max
19mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 40mΩ @ VGS = 1.8V 120mΩ @ VGS = 1.5V
ID Max TC = +25°C
15A 14A 10A 6A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Battery Management Application
- Power Management Functions
- DC-DC Converters
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
- 0.6mm Profile
- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
-...