• Part: DMN3055LFDBQ
  • Description: Dual N-CHANNEL MOSFET
  • Manufacturer: Diodes Incorporated
  • Size: 535.31 KB
Download DMN3055LFDBQ Datasheet PDF
DMN3055LFDBQ page 2
Page 2
DMN3055LFDBQ page 3
Page 3

Datasheet Summary

Product Summary BVDSS 30V RDS(ON) Max 40mΩ @ VGS = 4.5V 75mΩ @ VGS = 2.5V ID Max TA = +25°C 5.0A 3.6A DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - The DMN3055LFDBQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://.diodes./quality/product-definitions/ Description and Applications This MOSFET is designed to meet the...