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DMN95H8D5HCTI - N-CHANNEL MOSFET

General Description

This new generation complementary dual MOSFET

Key Features

  • low onresistance and fast switching, making it ideal for high efficiency power management.

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Other Datasheets by Diodes Incorporated

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NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 950V RDS(ON) 7Ω@VGS = 10V Package ITO220AB (Type TH) ID MAX TC = +25°C 2.5A Description This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. Features  Low Input Capacitance  High BVDSS Rating for Power Application  Low Input/Output Leakage  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.